Low-threshold operation of hemispherical microcavity single-quantum-well lasers at 4 K

F. M. Matinaga; A. Karlsson; S. MacHida; Y. Yamamoto; T. Suzuki; Y. Kadota; M. Ikeda

doi:10.1063/1.108928

Low-threshold operation of hemispherical microcavity single-quantum-well lasers at 4 K

F. M. Matinaga, A. Karlsson, S. MacHida, Y. Yamamoto, T. Suzuki, Y. Kadota, M. Ikeda

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We demonstrate low-threshold lasing at 4 K in optically pumped hemispherical In_0.2Ga_0.8As single-quantum-well microcavities. The incident threshold pump power density is 11 kW/cm² corresponding to an absorbed power density of about 320 W/cm², and the measured spontaneous emission factor β is about 0.01.

Original language	English
Pages (from-to)	443-445
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	5
DOIs	https://doi.org/10.1063/1.108928
State	Published - 1993
Externally published	Yes

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title = "Low-threshold operation of hemispherical microcavity single-quantum-well lasers at 4 K",

abstract = "We demonstrate low-threshold lasing at 4 K in optically pumped hemispherical In0.2Ga0.8As single-quantum-well microcavities. The incident threshold pump power density is 11 kW/cm2 corresponding to an absorbed power density of about 320 W/cm2, and the measured spontaneous emission factor β is about 0.01.",

author = "Matinaga, \{F. M.\} and A. Karlsson and S. MacHida and Y. Yamamoto and T. Suzuki and Y. Kadota and M. Ikeda",

year = "1993",

doi = "10.1063/1.108928",

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volume = "62",

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journal = "Applied Physics Letters",

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T1 - Low-threshold operation of hemispherical microcavity single-quantum-well lasers at 4 K

AU - Matinaga, F. M.

AU - Karlsson, A.

AU - MacHida, S.

AU - Yamamoto, Y.

AU - Suzuki, T.

AU - Kadota, Y.

AU - Ikeda, M.

PY - 1993

Y1 - 1993

N2 - We demonstrate low-threshold lasing at 4 K in optically pumped hemispherical In0.2Ga0.8As single-quantum-well microcavities. The incident threshold pump power density is 11 kW/cm2 corresponding to an absorbed power density of about 320 W/cm2, and the measured spontaneous emission factor β is about 0.01.

AB - We demonstrate low-threshold lasing at 4 K in optically pumped hemispherical In0.2Ga0.8As single-quantum-well microcavities. The incident threshold pump power density is 11 kW/cm2 corresponding to an absorbed power density of about 320 W/cm2, and the measured spontaneous emission factor β is about 0.01.

UR - https://www.scopus.com/pages/publications/0027540493

U2 - 10.1063/1.108928

DO - 10.1063/1.108928

M3 - Artículo

AN - SCOPUS:0027540493

SN - 0003-6951

VL - 62

SP - 443

EP - 445

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Low-threshold operation of hemispherical microcavity single-quantum-well lasers at 4 K

Abstract

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